{"title":"Parameter calibration of drift-diffusion model in quasi-ballisitc transport region with Monte Carlo method","authors":"Lei Shen, S. Di, L. Yin, Xiaoyan Liu, G. Du","doi":"10.23919/SNW.2017.8242303","DOIUrl":null,"url":null,"abstract":"As the device scaling down to sub-10nm, the quasi-ballistic transport becomes important. Some previous works have suggested using DD method to involve the quasi-ballistic transport effect through modifying the transport parameters. A procedure is introduced to calibrate the transport parameters of the DD model by using the simulation results of MC device simulator.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
As the device scaling down to sub-10nm, the quasi-ballistic transport becomes important. Some previous works have suggested using DD method to involve the quasi-ballistic transport effect through modifying the transport parameters. A procedure is introduced to calibrate the transport parameters of the DD model by using the simulation results of MC device simulator.
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