J. Campbell, A. Beling, M. Piels, Yang Fu, A. Cross, Qiugui Zhou, J. Peters, J. Bowers, Zhi Li
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引用次数: 3
Abstract
High-power, high-linearity photodiodes are essential components for photonic microwave applications since they have the potential to improve many aspects of the link performance such as link gain, noise figure, and spurious free dynamic range. This talk will describe photodiode structures that we have developed to achieve RF output power levels as high as 0.75 W at 15 GHz and high linearity, as measured by the output third-order intercept point (OIP3), > 55 dBm. Recent work has focused on extending operation to higher frequencies and heterogeneous integration with Si photonic circuits.
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