Impact of Schottky Barrier on the Performance of Two-Dimensional Material Transistors

Abstract

Double-gated monolayer two-dimensional (2D) material transistor is expected to offer ideal (~60 mV/dec) subthreshold swing (SS) for gate lengths well below 10 nm. However, the ideal 2D transistor assumes Ohmic contacts whereas a realistic metal/2D Schottky contact can degrade SS. Transport simulations including scattering is necessary to correctly describe carrier thermalization and predict the SS degradation. Scaled 2D transistors with a Schottky barrier height (SBH) smaller than 100 meV and doping concentration in the extension region larger than 2x1013 cm-2 are required to achieve high performance.