Simultaneous EUV flare variation minimization and CMP control with coupling-aware dummification

Chi-Yuan Liu, H. Chiang, Yao-Wen Chang, J. H. Jiang
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引用次数: 6

Abstract

EUV flare and CMP metal thickness are two main manufacturability concerns for nanometer process technology. The two dummification objectives, however, are conflicting with each other in nature, but existing works only tackle them separately, leading to problem-prone solutions because optimizing one would deteriorate the other. This paper presents the first work that simultaneously considers both concerns during manufacturability optimization. Given a system's point spread function, our proposed method first finds an initial solution with better-than-state-of-the-art EUV flare uniformity, then followed by gradient-guided optimization to iteratively refine density uniformity. Experimental results show the effectiveness of our method.
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同时极紫外光耀斑变化最小化和耦合感知伪化的CMP控制
EUV光晕和CMP金属厚度是纳米工艺中两个主要的可制造性问题。然而,这两个虚拟目标在本质上是相互冲突的,但现有的工作只是分别处理它们,导致容易出现问题的解决方案,因为优化一个会使另一个恶化。本文首次提出了在可制造性优化中同时考虑这两个问题的方法。给定系统的点扩散函数,我们提出的方法首先找到一个初始解,具有优于最先进的EUV耀斑均匀性,然后通过梯度引导优化迭代细化密度均匀性。实验结果表明了该方法的有效性。
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