Shreyasi Das, A. Ghorai, Sourabh Pal, S. Mahato, Soumen K. Das, S. Ray
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引用次数: 0
Abstract
A promising device architecture that can achieve high response in photodetector devices can be consists of an effective semiconductor layer with high carrier mobility and highly photoabsorbing material. Here, we report a superior broadband visible photodetector with a few-layer tungsten disulfide (WS2) decorated with cesium lead iodide (CsPbI3) nano-crystals (NCs) in hybrid heterojunctions. An enhancement in photocurrent is demonstrated in the CsPbI3 NCs decorated WS2 0D/2D hybrid nanostructure compared to pristine WS2, revealing the potential of hybrid systems in next generation optoelectronic devices.
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