1.68μJ/signature-generation 256-bit ECDSA over GF(p) signature generator for IoT devices

Masato Tamura, M. Ikeda
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引用次数: 10

Abstract

We have designed and fabricated a 256-bit elliptic curve digital signature algorithm (ECDSA) on a GF(p) signature generation processor in SOTB 65-nm CMOS. We have optimized the pipeline architecture of the Montgomery multiplier by exploiting parallelism, and have achieved 1/50 energy consumption for signature generation, as compared with the previously reported state-of-the-art. Our processor showed correct operation under a wide range of power supply voltages (Vdd) from 1.1 V to 0.25 V, realized a signature generation time (Tsg) of 325 μs at Vdd of 1.1 V and a body bias of VBP = 0.55 V and VBN = 0.55 V, Tsg of 2.3 ms and an energy consumption of 1.68 μJ at Vdd of 0.3 V and a body bias of VBP = 0.3 V and VBN = 0 V, and Tsg of 11 ms and a power consumption of 0.15 mW at Vdd of 0.25 V and a body bias of VBP = 0.37 V and VBN = −0.12 V. Our design demonstrated the lowest power/energy value ever reported and the fastest signature generation ever reported in real silicon.
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1.68μJ/签名生成物联网设备的256位ECDSA over GF(p)签名发生器
我们在SOTB 65nm CMOS的GF(p)签名生成处理器上设计并制作了一个256位椭圆曲线数字签名算法(ECDSA)。我们通过利用并行性优化了Montgomery乘法器的管道架构,与之前报道的最新技术相比,签名生成的能耗达到了1/50。我们的处理器显示正确的操作在一个广泛的电源电压(Vdd)从1.1 V至0.25 V,意识到一个签名生成时间(次数)为325μs Vdd 1.1 V,身体倾向VBP = 0.55 V和VBN = 0.55 V, 2.3毫秒的次数和能源消耗为1.68μJ Vdd的0.3 V和身体偏见VBP = 0.3 V和VBN = 0 V,次数11女士和功耗Vdd 0.25 V和0.15 mW的身体倾向VBP = 0.37 V和VBN =−0.12 V。我们的设计展示了有史以来最低的功率/能量值,以及有史以来最快的签名生成。
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