C. Lai, C.C. Huang, K. Chiang, H. Kao, W. Chen, A. Chin, C. Chi
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引用次数: 4
Abstract
We have obtained good non-volatile memory device integrity of fast 100mus program and 1ms erase time at plusmn13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85degC in the new IrO2-HfAlO-AlN-SiO2-Si MONOS device
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