Three Stage 5-18.5 GHz High Gain and High Power Amplifier Based on 0.15 μm GaN Technology

M. Dinari, G. Mouginot, E. Byk, V. Brunel, C. Chang, L. Brunel, M. Camiade
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引用次数: 2

Abstract

This paper presents a wideband three stage monolithic HPA design and characterizations. It is realized on UMS 0.15 μm GaN technology on SiC substrate. The main challenge was to find a good trade-off between RF characteristics (power, Power Added Efficiency, gain flatness and Input/Output return loss in a wide frequency range), thermal characteristics, and chip size: this was achieved by combining distributed (first stage) and reactively matched (second and third stages) architectures. The characterization results show an output power from 5.5 W to 9 W, an average PAE of 22% and a small signal gain higher than 30 dB over the frequency band 5-18.5 GHz. These performances are obtained in test fixture, and in Continuous Wave mode (CW).
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基于0.15 μm GaN技术的三级5-18.5 GHz高增益高功率放大器
本文提出了一种宽带三级单片HPA的设计和特性。它是在SiC衬底上采用ums0.15 μm GaN技术实现的。主要的挑战是在射频特性(功率、功率附加效率、增益平坦度和宽频率范围内的输入/输出回波损耗)、热特性和芯片尺寸之间找到一个良好的权衡:这是通过结合分布式(第一阶段)和反应匹配(第二和第三阶段)架构来实现的。表征结果表明,在5-18.5 GHz频段内,输出功率为5.5 W至9 W,平均PAE为22%,信号增益小于30 dB。这些性能是在测试夹具和连续波模式(CW)下获得的。
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