Using the NH3 flush step to prevent Cu extrusion for improving stand-by current performance for 28nm-node Cu interconnect and beyond

C. Lai, Y. Lu, Wei Lin Wang, Chia-Yu Li, Hung-Ju Chien, T. Ying
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Abstract

The stand-by current (Isb) performance is impacted by the failure of Cu interconnects due to Cu extrusion forming Cu-loss. This paper provides the solution to overcome the formation of Cu-loss without modifying via etching reactant to keep the capability of via etching tuning. Cu-loss strongly depends on the existence of Cu-F produced by via etching process. By inserting the NH3 flush step, Cu-F is completely removed. Moreover, 5 times the queue time extension is achieved. The Isb failure by Cu-loss is obviously exterminated.
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采用NH3冲洗步骤防止Cu挤压,提高28nm节点Cu互连及以后的待机电流性能
由于Cu挤压形成Cu损耗而导致的Cu互连失效影响了待机电流(Isb)性能。本文提出了在不改变蚀刻反应物的情况下克服铜损耗形成的解决方案,以保持蚀刻调谐的能力。铜的损耗很大程度上取决于蚀刻过程中产生的Cu-F的存在。通过插入NH3冲洗步骤,Cu-F被完全去除。此外,还实现了5倍的队列时间延长。铜损失导致的Isb失效明显消除。
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