Gate voltage dependent model for TDDB lifetime prediction under direct tunneling regime

Abstract

Systematic experiments are carried out in this paper for quantitative understanding of gate voltage scaling for TDDB under the direct tunneling regime. It is found that the slope of ln T/sub BD/ has a nonlinear relationship to V/sub ox/. A simple model to explain the experimental voltage acceleration factor is proposed based on the anode hole injection (AHI) concept. It is shown, according to model prediction, that the 1.8 nm gate oxide is still reliable under real operational voltage conditions.