Establishment of Highly Dense Wire Bonding with Insulated Au Wire

Abstract

The most popular first - level interconnection technologies used for the connection of chip to chip and chip to substrate are Wire Bonding and Flip Chip. As the semiconductor packaging requirement leading toward the finer pitch, higher pin count, multi -stack devices, there is an increase in the challenges for wire bonding process. With increase number of bond pads, wire bonding on multi -stack devices platform which lead to complex design of the layout that causes wire to cross, bundle and touch each other after molding process due to wire sweep effect, insulated bonding wire, X-Wire™ was introduced. X-Wire™ Technology is a patented nano-scale thin film dielectric coating that is applied onto the bare wire via proprietary application process. This coating provides a level of electrical insulation that permits bonding wires to cross and contact within electronic devices without risk of short-circuiting. In this studies, selection of capillary and parameters optimization of the FAB size, ball size range of 39µm+/-5 µm will be achieved with bond pad size 50µm by 50µm using the 0.7mils X-Wire™. The wire bonder used for this evaluation and study is ASM Extreme Eagle. Dage Bond Tester Series 4000 will be used to collect the ball shear and wire pull measurement. Failure mode will be analyse using high power scope and SEM and results will be shared in the full paper.