Shih-Chih Chen, Ruey-Lue Wang, Cheng-Lung Tsai, Jui-Hao Shang, Chien-Hsuan Liu
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引用次数: 2
Abstract
This paper presents a full band (3.1 GHz to 10.6 GHz) current-reused low noise amplifier (LNA) for ultra wide band (UWB) system based on the TSMC 0.35 m bipolar silicon-germanium (SiGe) processes. The implemented LNA achieves the gain of 14.3 dB, the noise figure (NF) minimum of 2.5 dB and good input and output matching from 3.1 GHz to 10.6 GHz. The power consumption is only 5.4 mW under a 1.5 supply voltage. By adding a feedback resister in the second stage of the adopted current-reused topology, the gain flatness is less than 0.5 dB in every band group. The circuit occupies an area of 1.33 mm2.
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