K. Avramenko, N. Roshchina, G. Olkhovik, P. Smertenko, L. V. Zavyalova
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引用次数: 0
Abstract
This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc on silicon substrates at 280-320 °C substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.
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