Effect of Bi2O3 doping and CIP on ionic conductivity of scandia ceria stabilized zirconia

E. Nesova, V. Barbashov, A. Jebel, Y. Komysa
{"title":"Effect of Bi2O3 doping and CIP on ionic conductivity of scandia ceria stabilized zirconia","authors":"E. Nesova, V. Barbashov, A. Jebel, Y. Komysa","doi":"10.1109/OMEE.2014.6912356","DOIUrl":null,"url":null,"abstract":"Effect of Bi<sub>2</sub>O<sub>3</sub> doping and cold isostatic pressing (CIP ) on the ionic conductivity of the ceramics ZrO<sub>2</sub> + 10 mol .% Sc<sub>2</sub>O<sub>3</sub> + 1 mol. % CeO<sub>2</sub> was studied. It was established that sintering the Bi<sub>2</sub>O<sub>3</sub> doped ceramic specimens uses the lower temperatures after cold isostatic pressing (value of the sintering temperature was less than 400°C). CIP and sintering regimes (0.6 GPa ; 1100°C at 70 h) of specimens yielded high conductive and dense ceramics (0.028 S cm<sup>-1</sup> at 800°C).","PeriodicalId":142377,"journal":{"name":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2014.6912356","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Effect of Bi2O3 doping and cold isostatic pressing (CIP ) on the ionic conductivity of the ceramics ZrO2 + 10 mol .% Sc2O3 + 1 mol. % CeO2 was studied. It was established that sintering the Bi2O3 doped ceramic specimens uses the lower temperatures after cold isostatic pressing (value of the sintering temperature was less than 400°C). CIP and sintering regimes (0.6 GPa ; 1100°C at 70 h) of specimens yielded high conductive and dense ceramics (0.028 S cm-1 at 800°C).
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Bi2O3掺杂和CIP对氧化锆离子电导率的影响
研究了Bi2O3掺杂和冷等静压(CIP)对ZrO2 + 10 mol. % Sc2O3 + 1 mol. % CeO2陶瓷离子电导率的影响。结果表明,Bi2O3掺杂陶瓷试样的烧结采用冷等静压后较低的温度(烧结温度小于400℃)。CIP和烧结制度(0.6 GPa;1100°C, 70 h)的样品产生高导电和致密的陶瓷(0.028 S cm-1, 800°C)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Study of effects of rare earth impurities on structure of matrix emission of the lead tungstate crystals Effect of Bi2O3 doping and CIP on ionic conductivity of scandia ceria stabilized zirconia Composite magnetic domain structure in epitaxial YIG films with moderate uniaxial anisotropy Modifying the properties of crystals in the transition from pure to mixed perovskites Optical spectroscopy of borate glasses, doped with europium
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1