H. Madureira, N. Deltimple, E. Kerhervé, S. Haddad
{"title":"Design of a class EF2 power oscillator for RF communication application","authors":"H. Madureira, N. Deltimple, E. Kerhervé, S. Haddad","doi":"10.1109/ICECS.2013.6815526","DOIUrl":null,"url":null,"abstract":"A power oscillator based on a class EF2 power amplifier is presented. The class EF2 power amplifier uses a short circuit to the second harmonic across the switch to lower it's voltage stress and delivers a more sinusoidal power waveform than the class E counterpart. The presented circuit was designed in standard ST Microelectronics CMOS 130nm and is able to deliver 20.6dBm RF power from a 2V supply voltage with a 42% DC-RF efficiency at 2.5GHz and present 12.5% tuning range. The drain efficiency of the class EF2 core is 49.4%. The phase noise is as low as -118.8dBc/Hz @ 1MHz. The output power spectrum presents 30.7dB power difference between the fundamental frequency and the strongest upper harmonic. The total used area is 1550um × 1280um.","PeriodicalId":117453,"journal":{"name":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"168 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2013.6815526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A power oscillator based on a class EF2 power amplifier is presented. The class EF2 power amplifier uses a short circuit to the second harmonic across the switch to lower it's voltage stress and delivers a more sinusoidal power waveform than the class E counterpart. The presented circuit was designed in standard ST Microelectronics CMOS 130nm and is able to deliver 20.6dBm RF power from a 2V supply voltage with a 42% DC-RF efficiency at 2.5GHz and present 12.5% tuning range. The drain efficiency of the class EF2 core is 49.4%. The phase noise is as low as -118.8dBc/Hz @ 1MHz. The output power spectrum presents 30.7dB power difference between the fundamental frequency and the strongest upper harmonic. The total used area is 1550um × 1280um.
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