Opportunities in 3D substrate bonding

T. Matthias, T. Uhrmann, V. Dragoi, P. Lindner
{"title":"Opportunities in 3D substrate bonding","authors":"T. Matthias, T. Uhrmann, V. Dragoi, P. Lindner","doi":"10.1109/S3S.2013.6716528","DOIUrl":null,"url":null,"abstract":"Vertical stacking of thin chips combined with Through-Silicon-Vias (TSVs) as interconnects is an attractive path to higher functional density of ICs. Different functional entities of a device are manufactured separately and later integrated by wafer bonding. This enables a modular device architecture and thus a modular manufacturing supply chain. Device manufacturers can focus on their core competence, e.g., designing and building the ASIC, and then add standardized modules, such as logic controllers or memory, from other manufacturers. Stacking dies enables the electrical performance of a system-on-chip, but it reduces the design time, complexity and cost significantly. Wafer bonding is a key manufacturing technology for 3D ICs. Fusion wafer bonding, which was initally developed for SOI wafer manufacturing is the most promising wafer stacking technology for 3D ICs.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2013.6716528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Vertical stacking of thin chips combined with Through-Silicon-Vias (TSVs) as interconnects is an attractive path to higher functional density of ICs. Different functional entities of a device are manufactured separately and later integrated by wafer bonding. This enables a modular device architecture and thus a modular manufacturing supply chain. Device manufacturers can focus on their core competence, e.g., designing and building the ASIC, and then add standardized modules, such as logic controllers or memory, from other manufacturers. Stacking dies enables the electrical performance of a system-on-chip, but it reduces the design time, complexity and cost significantly. Wafer bonding is a key manufacturing technology for 3D ICs. Fusion wafer bonding, which was initally developed for SOI wafer manufacturing is the most promising wafer stacking technology for 3D ICs.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
3D基板粘合的机会
薄芯片的垂直堆叠与通硅过孔(tsv)作为互连是提高集成电路功能密度的一个有吸引力的途径。器件的不同功能实体分别制造,然后通过晶圆键合集成。这就实现了模块化的设备架构,从而实现了模块化的制造供应链。设备制造商可以专注于他们的核心竞争力,例如设计和构建ASIC,然后添加其他制造商的标准化模块,例如逻辑控制器或内存。堆叠晶片可以实现片上系统的电气性能,但它大大减少了设计时间、复杂性和成本。晶圆键合是3D集成电路的关键制造技术。融合晶圆键合最初是为SOI晶圆制造而开发的,是3D集成电路中最有前途的晶圆堆叠技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Direct point-contact characterization of Bias instability on bare SOI wafers Parallelism and pipelining in ultra low voltage digital circuits Enabling Sub-nW RF circuits through subthreshold leakage management Low power false positive tolerant event detector for seismic sensors Practical process flows for monolithic 3D
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1