Modeling demands for nanoscale devices

M. Pourfath, V. Sverdlov, S. Selberherr
{"title":"Modeling demands for nanoscale devices","authors":"M. Pourfath, V. Sverdlov, S. Selberherr","doi":"10.1109/DRC.2010.5551915","DOIUrl":null,"url":null,"abstract":"With the progress of miniaturization the size of electronic devices is presently scaling down into the nanometer region, where quantum mechanical effects play an important role. Appropriate technology computer-aided design tools are essential to explore the physics of nanoscale devices and to find methods to optimize their functionality and performance. In this work we review the approaches to quantum mechanical modeling of carrier transport in nanoscale electronic devices. Numerical analyses for graphene nanoribbons are presented as a case study.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551915","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

With the progress of miniaturization the size of electronic devices is presently scaling down into the nanometer region, where quantum mechanical effects play an important role. Appropriate technology computer-aided design tools are essential to explore the physics of nanoscale devices and to find methods to optimize their functionality and performance. In this work we review the approaches to quantum mechanical modeling of carrier transport in nanoscale electronic devices. Numerical analyses for graphene nanoribbons are presented as a case study.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
纳米级器件的建模需求
随着微型化的发展,电子器件的尺寸已经缩小到纳米级,量子力学效应在其中起着重要的作用。适当的技术,计算机辅助设计工具是必不可少的,以探索纳米级器件的物理和找到方法,以优化其功能和性能。在这项工作中,我们回顾了纳米级电子器件中载流子输运的量子力学建模方法。以石墨烯纳米带为例进行了数值分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Recent progress in GaN FETs on silicon substrate for switching and RF power applications Room temperature nonlinear ballistic nanodevices for logic applications III–V FET channel designs for high current densities and thin inversion layers High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh Non-volatile spin-transfer torque RAM (STT-RAM)
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1