G. Loubriel, M. O’Malley, F. Zutavern, B. McKenzie, W. R. Conley
{"title":"Surface flashover threshold and switched fields of photoconductive semiconductor switches","authors":"G. Loubriel, M. O’Malley, F. Zutavern, B. McKenzie, W. R. Conley","doi":"10.1109/CEIDP.1988.26369","DOIUrl":null,"url":null,"abstract":"It is shown that Si photoconductive semiconductor switches can be used to switch high voltages (up to 123 kV), high fields (up to 82 kV/cm) and high currents (2.8 kA). The ability of the samples to withstand this type of high-voltage, high-current switching depends on the way in which the current penetrates the semiconductor. The appropriate use of water or contacts greatly improves the switching capability. It is also shown that the wafers can support large currents (4.0 kA for GaAs and 2.8 kA for Si) and large linear current densities (3.2 kA/cm for GaAs and 1.4 kA/cm for Si). For GaAs this linear current density corresponds to about 1 MA/cm/sup 2/ given a penetration depth of about 10/sup -3/ cm.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP.1988.26369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
It is shown that Si photoconductive semiconductor switches can be used to switch high voltages (up to 123 kV), high fields (up to 82 kV/cm) and high currents (2.8 kA). The ability of the samples to withstand this type of high-voltage, high-current switching depends on the way in which the current penetrates the semiconductor. The appropriate use of water or contacts greatly improves the switching capability. It is also shown that the wafers can support large currents (4.0 kA for GaAs and 2.8 kA for Si) and large linear current densities (3.2 kA/cm for GaAs and 1.4 kA/cm for Si). For GaAs this linear current density corresponds to about 1 MA/cm/sup 2/ given a penetration depth of about 10/sup -3/ cm.<>
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