0.9 V, 5 nW, 9 ppm/oC resistorless sub-bandgap voltage reference in 0.18μm CMOS

O. E. Mattia, H. Klimach, S. Bampi
{"title":"0.9 V, 5 nW, 9 ppm/oC resistorless sub-bandgap voltage reference in 0.18μm CMOS","authors":"O. E. Mattia, H. Klimach, S. Bampi","doi":"10.1109/LASCAS.2014.6820273","DOIUrl":null,"url":null,"abstract":"In this work a novel resistorless sub-bandgap voltage reference (BGR) is introduced. It is a self-biased and small area topology that works in the nano-ampere current consumption range, and under 1 V of power supply. The analytical behavior of the circuit is described, and simulation results for a standard 0.18 μm CMOS process are analysed. A reference voltage of 479 mV is demonstrated, with a temperature coefficient of 8.79 ppm/°C for the 0 to 125°C range, while the power consumption of the whole circuit is 4.86 nW under a 0.9 V power supply at 27 oC. The estimated silicon area is 0.0012 mm2.","PeriodicalId":235336,"journal":{"name":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2014.6820273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

In this work a novel resistorless sub-bandgap voltage reference (BGR) is introduced. It is a self-biased and small area topology that works in the nano-ampere current consumption range, and under 1 V of power supply. The analytical behavior of the circuit is described, and simulation results for a standard 0.18 μm CMOS process are analysed. A reference voltage of 479 mV is demonstrated, with a temperature coefficient of 8.79 ppm/°C for the 0 to 125°C range, while the power consumption of the whole circuit is 4.86 nW under a 0.9 V power supply at 27 oC. The estimated silicon area is 0.0012 mm2.
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0.9 V, 5 nW, 9 ppm/oC, 0.18μm CMOS无电阻子带隙基准电压
本文介绍了一种新型的无电阻亚带隙基准电压(BGR)。它是一种自偏置小面积拓扑结构,工作在纳米安培电流消耗范围内,电源电压低于1v。描述了该电路的解析特性,并对标准0.18 μm CMOS工艺的仿真结果进行了分析。参考电压为479 mV,在0至125℃范围内温度系数为8.79 ppm/°C,而在27℃下0.9 V电源下整个电路的功耗为4.86 nW。估计硅的面积为0.0012 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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