K. Hubbard, K. MacGowan, C. Kau, D. Smith, S. Maas
{"title":"A family of low cost high performance HEMT MMICs for commercial DBS applications","authors":"K. Hubbard, K. MacGowan, C. Kau, D. Smith, S. Maas","doi":"10.1109/MCS.1995.470974","DOIUrl":null,"url":null,"abstract":"A family of GaAs HEMT MMICs have been developed for use in Direct Broadcast Satellite TV (DBS) US, Japanese, and European markets. These designs are very compact, high performance, and self-biased. They are meant as building blocks for low noise block (LNB) downconverters. Described in this paper are the receiver chip, low noise amplifier, and self-biased single HEMT device (should a MIC LNA be preferred). The key design is the receiver chip with a nominal gain of 38 dB and NF of less than 3 dB for the US band. This paper presents a description of each design, a performance summary, as well as information describing their actual use in an LNB design.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
A family of GaAs HEMT MMICs have been developed for use in Direct Broadcast Satellite TV (DBS) US, Japanese, and European markets. These designs are very compact, high performance, and self-biased. They are meant as building blocks for low noise block (LNB) downconverters. Described in this paper are the receiver chip, low noise amplifier, and self-biased single HEMT device (should a MIC LNA be preferred). The key design is the receiver chip with a nominal gain of 38 dB and NF of less than 3 dB for the US band. This paper presents a description of each design, a performance summary, as well as information describing their actual use in an LNB design.<>