Ensuring Charge Conservation in GaN HEMT Large Signal Model

C. Wilson, J. King
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引用次数: 5

Abstract

In this paper an experiment has been carried out, in MATLAB, where measured S-parameters from a 10W MACOM wafer device have been fit using an equivalent circuit model. The extracted intrinsic element values aim to keep the modelled and measured results in good agreement with one another while ensuring capacitance values do not break the principles of charge conservation. The model has been verified using measured S-parameters taken over a wide bias plane as well as at frequencies ranging up to 10GHz. The results from our experiment shows an accurate intrinsic model with smooth realistic capacitances between the gate-source and gate-drain terminals while ensuring charge conservation.
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保证GaN HEMT大信号模型中的电荷守恒
本文在MATLAB中进行了实验,其中使用等效电路模型拟合了10W MACOM晶圆器件的测量s参数。在保证电容值不违背电荷守恒原理的同时,所提取的本征元素值的目的是使模拟结果和测量结果保持良好的一致性。该模型已通过在宽偏置平面上以及高达10GHz的频率范围内测量的s参数进行验证。实验结果表明,在保证电荷守恒的情况下,栅极源端和栅极漏端之间具有光滑的真实电容的精确的本征模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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