T. Onken, J. Heilmann, T. Bieniek, R. Pufall, B. Wunderle
{"title":"High cycle fatigue testing and modelling of sputtered aluminium thin films on vibrating silicon MEMS cantilevers","authors":"T. Onken, J. Heilmann, T. Bieniek, R. Pufall, B. Wunderle","doi":"10.1109/EUROSIME.2016.7463332","DOIUrl":null,"url":null,"abstract":"Aluminium is still one of the most important contact metallisations for power electronic chips like MOSFETs or IGBTs. With a large difference in thermal expansion coefficients (CTEs) between aluminium and silicon and the temperatures generated in hot-spots during high power transients, these layers are prone to failure due to thermo-mechanical fatigue. So far, lifetime modelling was done by subjecting dedicated test specimens to the thermal cycling one would expect during normal operation. This paper will propose a novel method for creating accelerated lifetime models of thin aluminium films within the high-cycle fatigue regime by isothermal mechanical loads. The specially designed test stand is suggested to complement or replace expensive and lengthy thermal cycling and allow in-situ monitoring of failure indicators.","PeriodicalId":438097,"journal":{"name":"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2016.7463332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Aluminium is still one of the most important contact metallisations for power electronic chips like MOSFETs or IGBTs. With a large difference in thermal expansion coefficients (CTEs) between aluminium and silicon and the temperatures generated in hot-spots during high power transients, these layers are prone to failure due to thermo-mechanical fatigue. So far, lifetime modelling was done by subjecting dedicated test specimens to the thermal cycling one would expect during normal operation. This paper will propose a novel method for creating accelerated lifetime models of thin aluminium films within the high-cycle fatigue regime by isothermal mechanical loads. The specially designed test stand is suggested to complement or replace expensive and lengthy thermal cycling and allow in-situ monitoring of failure indicators.