28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing

H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barrai, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. de Franceschi, M. Vinet
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引用次数: 41

Abstract

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
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28nm全耗尽SOI技术:量子计算的低温控制电子技术
本文报道了28nm全耗尽型soi CMOS技术的首次低温表征。全面研究了从室温到液氦温度的数字/模拟性能和体偏。尽管是低温操作,体偏置的有效性保持不变,并提供了良好的Vth可控性。低温工作可以实现更高的驱动电流和大大降低亚阈值摆幅(低至7mV/dec)。FDSOI可以为低温低功耗电子产品提供有价值的方法。设想了量子处理器的经典控制硬件等应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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