A differential floating gate capacitance mismatch measurement technique

J. Hunter, P. Gudem, S. Winters
{"title":"A differential floating gate capacitance mismatch measurement technique","authors":"J. Hunter, P. Gudem, S. Winters","doi":"10.1109/ICMTS.2000.844421","DOIUrl":null,"url":null,"abstract":"This paper describes a differential floating gate capacitance matching measurement technique that offers a significant improvement in resolution over those previously reported. It's smaller differential output voltage can be measured to a much higher precision than that of a standard structure. In addition, the differential technique offers superior cancellation of parasitic overlap capacitance effects. Our technique was successfully demonstrated on a 0.50 /spl mu/m analog BiCMOS technology.","PeriodicalId":447680,"journal":{"name":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2000.844421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

This paper describes a differential floating gate capacitance matching measurement technique that offers a significant improvement in resolution over those previously reported. It's smaller differential output voltage can be measured to a much higher precision than that of a standard structure. In addition, the differential technique offers superior cancellation of parasitic overlap capacitance effects. Our technique was successfully demonstrated on a 0.50 /spl mu/m analog BiCMOS technology.
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差分浮栅电容失配测量技术
本文描述了一种差分浮栅电容匹配测量技术,该技术在分辨率上比以前报道的有显著提高。它的差分输出电压较小,测量精度比标准结构高得多。此外,差分技术提供了优越的消除寄生重叠电容效应。我们的技术在0.50 /spl mu/m模拟BiCMOS技术上成功验证。
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