C. Andrei, Gregory Bassement, D. Depreeuw, G. Imbert
{"title":"Bicmos LC-tank characterization and extraction of small signal equivalent circuit","authors":"C. Andrei, Gregory Bassement, D. Depreeuw, G. Imbert","doi":"10.1109/SMICND.2010.5650760","DOIUrl":null,"url":null,"abstract":"In this paper, a procedure for characterization and modeling of LC-tanks is proposed to enhance simulation accuracy in design of monolithic Voltage Controlled Oscillators (VCO). This efficient procedure is easy to implement combining robust design of G-S-G (Ground-Signal-Ground) test structures and accurate on-wafer characterizations, and it is in particular suitable for modeling of high frequency VCOs fabricated in advanced CMOS and BiCMOS technologies. The methodology allows the extraction of LC-tank capacitors including all RLC-tank parasitics and therefore features an important increase of modeling accuracy. The method has been validated in the case of several LC-tanks (oscillating between 6 and 10GHz). The tank inductors and capacitors have been characterized on-wafer up to 50GHz.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2010 Proceedings (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2010.5650760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a procedure for characterization and modeling of LC-tanks is proposed to enhance simulation accuracy in design of monolithic Voltage Controlled Oscillators (VCO). This efficient procedure is easy to implement combining robust design of G-S-G (Ground-Signal-Ground) test structures and accurate on-wafer characterizations, and it is in particular suitable for modeling of high frequency VCOs fabricated in advanced CMOS and BiCMOS technologies. The methodology allows the extraction of LC-tank capacitors including all RLC-tank parasitics and therefore features an important increase of modeling accuracy. The method has been validated in the case of several LC-tanks (oscillating between 6 and 10GHz). The tank inductors and capacitors have been characterized on-wafer up to 50GHz.