Plasmon excitation of coherent interface phonons in Si-SiO2 systems

M. Choi, N. Zhang, M. Dutta, M. Stroscio, Carlos O. Aspetti, R. Agarwal
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引用次数: 1

Abstract

Coherent interface phonon generation by surface plasmon in silver-SiO2-silicon system is analyzed, based on the impulsive stimulated scattering theory model. The surface plasmon is first analyzed, and applied to semiclassical stimulated Raman scattering theory. Our calculatation shows that the photon-induced surface plasmons store about 20-30% of the total incoming energy, and it is considered in the analysis. Phonon potential of the generated phonons is also calculated.
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Si-SiO2体系中相干界面声子的等离子激元激发
基于脉冲受激散射理论模型,分析了银- sio2 -硅体系中表面等离子体产生的相干界面声子。首先分析了表面等离子体,并将其应用于半经典受激拉曼散射理论。我们的计算表明,光子诱导的表面等离子体存储了大约20-30%的总入射能量,并在分析中考虑了这一点。并计算了所产生声子的声子势。
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