H. Li, T. Pompl, C. Young, T. Rhoad, J. Saulters, J. Peterson, M. Gardner, G.A. Brown, G. Bersuker, P. Zeitzoff, J. Price, P. Hung, A. Diebold, H. Huff
{"title":"N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]","authors":"H. Li, T. Pompl, C. Young, T. Rhoad, J. Saulters, J. Peterson, M. Gardner, G.A. Brown, G. Bersuker, P. Zeitzoff, J. Price, P. Hung, A. Diebold, H. Huff","doi":"10.1109/DRC.2004.1367760","DOIUrl":null,"url":null,"abstract":"A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
