A. Ruangphanit, A. Poyai, R. Muanghlua, S. Niemcharoen, W. Titiroongruang
{"title":"Development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width","authors":"A. Ruangphanit, A. Poyai, R. Muanghlua, S. Niemcharoen, W. Titiroongruang","doi":"10.1109/ECTICON.2016.7561330","DOIUrl":null,"url":null,"abstract":"In paper, a development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width was presented. The models have been developed including the temperature affect of surface potentials, intrinsic carrier concentration and energy band gap. The threshold voltages were measured by the linear extrapolation methodology. The temperature dependence and the body-bias dependence of threshold voltage model of a big NMOS and a narrow channel width NMOS are proposed. The results show that, the measured threshold voltage compared with the development threshold voltage model was low level error.","PeriodicalId":200661,"journal":{"name":"2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTICON.2016.7561330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In paper, a development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width was presented. The models have been developed including the temperature affect of surface potentials, intrinsic carrier concentration and energy band gap. The threshold voltages were measured by the linear extrapolation methodology. The temperature dependence and the body-bias dependence of threshold voltage model of a big NMOS and a narrow channel width NMOS are proposed. The results show that, the measured threshold voltage compared with the development threshold voltage model was low level error.
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