The application of end point detection in the fabrication of optical and microwave devices

M. Bourke, K. Hilton, M. Crouch, M. Kane, N. Borsing, T. Russell
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Abstract

Reactive ion etching is becoming increasingly widespread in the fabrication of III-V semiconductor devices. Particular applications include optical waveguides, heterojunction bipolar transistors (HBTs) and FET/HEMT type devices. Etch depth control is a critical issue in the fabrication of many devices. Optical waveguides require accurate etch depths for optical mode control whereas in the fabrication of HBTs there is a requirement to access a thin base layer. It is possible to fabricate devices using a "dead reckoning" method-however, this has proved not to be very accurate and a form of end point detection is required. A number of end point detection techniques are available and include optical emission spectroscopy, optical reflectometry and mass spectroscopy. This paper will compare all three methods and demonstrate weaknesses and strong points for each. Particular attention will be given to optical reflectometry and mass spectroscopy in the fabrication of HBTs.
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端点检测在光学和微波器件制造中的应用
反应离子蚀刻在III-V型半导体器件的制造中应用越来越广泛。特殊应用包括光波导、异质结双极晶体管(hbt)和FET/HEMT类型器件。蚀刻深度控制是许多器件制造中的一个关键问题。光波导需要精确的蚀刻深度来控制光模式,而在HBTs的制造中,需要访问薄的基材层。使用“航位推算”方法制造设备是可能的,然而,这种方法已被证明不是很准确,需要一种端点检测形式。一些终点检测技术是可用的,包括光学发射光谱,光学反射和质谱。本文将比较所有三种方法,并展示每种方法的优缺点。将特别注意光学反射法和质谱法在HBTs的制造。
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