{"title":"High-efficiency luminescence up-conversion of infrared to red light in type-I and type-II Al/sub x/Ga/sub 1-x/As/InGaP single heterostructures","authors":"Yong-Hoon Cho, H. Lim, W. Jhe","doi":"10.1109/CLEOPR.1999.817918","DOIUrl":null,"url":null,"abstract":"Photoluminescence (PL) up-conversion or anti-Stokes PL (ASPL) is a phenomenon in which the photon energy of PL output is higher than that of the excitation source. The ASPL phenomena in heterojunctions (HJs) and quantum wells (QWs) have recently received considerable attention since they are believed to have a mechanism quite different from the traditional one in bulk materials with potential device applications such as novel light emitting devices which take advantage of high energy up-conversion efficiencies. The ASPL phenomena in HJs or QWs can be observed with an extremely small excitation density of 0.1 W cm/sup -2/ at temperatures below 10 K, in contrast to the case of bulk semiconductors.","PeriodicalId":408728,"journal":{"name":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.1999.817918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Photoluminescence (PL) up-conversion or anti-Stokes PL (ASPL) is a phenomenon in which the photon energy of PL output is higher than that of the excitation source. The ASPL phenomena in heterojunctions (HJs) and quantum wells (QWs) have recently received considerable attention since they are believed to have a mechanism quite different from the traditional one in bulk materials with potential device applications such as novel light emitting devices which take advantage of high energy up-conversion efficiencies. The ASPL phenomena in HJs or QWs can be observed with an extremely small excitation density of 0.1 W cm/sup -2/ at temperatures below 10 K, in contrast to the case of bulk semiconductors.
上转换或反斯托克斯光致发光(ASPL)是光致发光输出的光子能量高于激发源的光子能量的一种现象。异质结(HJs)和量子阱(qw)中的ASPL现象最近受到了相当大的关注，因为它们被认为具有与块体材料中的传统机制完全不同的机制，具有潜在的器件应用，例如利用高能量上转换效率的新型发光器件。与体块半导体相比，在温度低于10 K的情况下，在极低的激发密度(0.1 W cm/sup -2/)下，可以观察到HJs或QWs中的ASPL现象。
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