{"title":"Possibility of Si resonant plasma-wave transistor as THz detector","authors":"J. Park, Sung-Ho Kim, Kyung Rok Kim","doi":"10.23919/SNW.2017.8242296","DOIUrl":null,"url":null,"abstract":"In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. Κ the channel mobility of strained Si R-PWT is 400 cm·V<sup>−1·</sup>s<sup>1</sup>, R-PWT can be operated as THz detector when channel length l= 21–28 nm.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. Κ the channel mobility of strained Si R-PWT is 400 cm·V−1·s1, R-PWT can be operated as THz detector when channel length l= 21–28 nm.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
