{"title":"Translatory MEMS actuator with extraordinary large stroke for optical path length modulation","authors":"T. Sandner, T. Grasshoff, H. Schenk","doi":"10.1117/12.879069","DOIUrl":null,"url":null,"abstract":"A translatory MOEMS actuator with extraordinary large stroke — especially developed for fast optical path length modulation in miniaturized FTIR-spectrometers — is presented for the first time. A precise translational out-of-plane oscillation at 500 Hz with large stroke of up to 1 mm is realized by means of a new suspension design of the comparative large mirror plate with 19.6 mm² aperture using four pantographs. The MOEMS device is driven electrostatically resonant and is manufactured in a CMOS compatible SOI process. Up to ± 500 Hz amplitude has been measured in vacuum of 50 Pa and 90 V driving voltage.","PeriodicalId":421895,"journal":{"name":"2010 International Conference on Optical MEMS and Nanophotonics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Optical MEMS and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.879069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
A translatory MOEMS actuator with extraordinary large stroke — especially developed for fast optical path length modulation in miniaturized FTIR-spectrometers — is presented for the first time. A precise translational out-of-plane oscillation at 500 Hz with large stroke of up to 1 mm is realized by means of a new suspension design of the comparative large mirror plate with 19.6 mm² aperture using four pantographs. The MOEMS device is driven electrostatically resonant and is manufactured in a CMOS compatible SOI process. Up to ± 500 Hz amplitude has been measured in vacuum of 50 Pa and 90 V driving voltage.