High-performance silicon-germanium technology

S. Subbanna, G. Freeman, S. Koester, K. Rim, A. Joseph, D. Harame
{"title":"High-performance silicon-germanium technology","authors":"S. Subbanna, G. Freeman, S. Koester, K. Rim, A. Joseph, D. Harame","doi":"10.1109/DRC.2005.1553117","DOIUrl":null,"url":null,"abstract":"This paper will focus on the various and ubiquitous uses of silicon-germanium (SiGe) in high-performance silicon-based semiconductor technology. SiGe can now qualify as a \"mature\" technology - it is almost 20 years since the first SiGe HBT work. It is 10 years since the qualification of SiGe as a manufacturable silicon technology in a high-volume silicon fabricator","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper will focus on the various and ubiquitous uses of silicon-germanium (SiGe) in high-performance silicon-based semiconductor technology. SiGe can now qualify as a "mature" technology - it is almost 20 years since the first SiGe HBT work. It is 10 years since the qualification of SiGe as a manufacturable silicon technology in a high-volume silicon fabricator
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高性能硅锗技术
本文将重点介绍硅锗(SiGe)在高性能硅基半导体技术中的各种广泛应用。SiGe现在可以称得上是一项“成熟”的技术——自第一台SiGe HBT工作以来,已经过去了将近20年。SiGe作为一种可批量生产的硅技术已经有10年的历史了
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
High-power stable field-plated AlGaN-GaN MOSHFETs A new four-terminal hybrid silicon/organic field-effect sensor device Tunnel junctions in GaN/AlN for optoelectronic applications Data retention behavior in the embedded SONOS nonvolatile memory cell Mobility and sub-threshold characteristics in high-mobility dual-channel strained Si/strainef SiGe p-MOSFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1