{"title":"Noise and gain performance of pseudomorphic-HEMT vs temperature for microwave low-noise applications","authors":"P. Livreri, M. Sannino","doi":"10.1109/EDMO.1995.493704","DOIUrl":null,"url":null,"abstract":"The high-electron mobility transistors (HEMTs) and their pseudomorphic version (pHEMT) are widely utilized for low-noise applications design due to their inherently low-noise characteristics. In this paper, a careful investigation on the noise and gain performance of a commercial pHEMT series for microwave low-noise applications has been carried out vs. temperature.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The high-electron mobility transistors (HEMTs) and their pseudomorphic version (pHEMT) are widely utilized for low-noise applications design due to their inherently low-noise characteristics. In this paper, a careful investigation on the noise and gain performance of a commercial pHEMT series for microwave low-noise applications has been carried out vs. temperature.
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