{"title":"Optical gain for wurtzite GaN with anisotropic strain in c-plane","authors":"K. Domen, K. Horino, A. Kuramata, T. Tanahashi","doi":"10.1063/1.118457","DOIUrl":null,"url":null,"abstract":"We calculated band structures of (1100)-oriented GaN with various strains. We found that introducing anisotropic strain in the c-plane split the heavy hole and light hole bands, resulting in reduction of the transparent carrier density.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"54","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.118457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 54
Abstract
We calculated band structures of (1100)-oriented GaN with various strains. We found that introducing anisotropic strain in the c-plane split the heavy hole and light hole bands, resulting in reduction of the transparent carrier density.
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