{"title":"On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter","authors":"W. Jin, Philip C. H. Chan, M. Chan","doi":"10.1109/LPE.1997.621292","DOIUrl":null,"url":null,"abstract":"The leakage current due to the parasitic PN junction diodes in SOI DTMOS (Dynamic threshold voltage MOSFET) inverter is reported. The additional power dissipation in DTMOS inverter due to the diodes is quantified through an analytical model and verified by MEDICI simulation. Power dissipation between conventional SOI CMOS and SOI DTMOS inverters is compared.","PeriodicalId":334688,"journal":{"name":"Proceedings of 1997 International Symposium on Low Power Electronics and Design","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1997 International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LPE.1997.621292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
The leakage current due to the parasitic PN junction diodes in SOI DTMOS (Dynamic threshold voltage MOSFET) inverter is reported. The additional power dissipation in DTMOS inverter due to the diodes is quantified through an analytical model and verified by MEDICI simulation. Power dissipation between conventional SOI CMOS and SOI DTMOS inverters is compared.
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