Phonon-induced quantum diffusion in semiconductors

R. Rosati, F. Rossi
{"title":"Phonon-induced quantum diffusion in semiconductors","authors":"R. Rosati, F. Rossi","doi":"10.1109/IWCE.2014.6865847","DOIUrl":null,"url":null,"abstract":"Starting from a density-matrix treatment of carrier-phonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phonon-induced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoex-cited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2014.6865847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Starting from a density-matrix treatment of carrier-phonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phonon-induced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoex-cited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.
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半导体声子诱导的量子扩散
从基于最近马尔科夫极限的载流子-声子相互作用的密度-矩阵处理开始,我们提供了半导体纳米结构中声子诱导量子扩散的详细研究。特别是,对于光激半导体中的载流子-载流子弛豫,我们的分析表明,简化的消相模型在描述声子诱导的非局域散射时是失败的,并指出这种限制对于准弹性耗散过程尤其严重。
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