Atomic qubits in silicon

M. Simmons
{"title":"Atomic qubits in silicon","authors":"M. Simmons","doi":"10.23919/SNW.2019.8782966","DOIUrl":null,"url":null,"abstract":"Extremely long electron and nuclear spin coherence times have been demonstrated in isotopically pure Si-28 [1, 2] making silicon a promising semiconductor material for spin-based quantum information. The two-level spin state of single electrons bound to shallow phosphorus donors in silicon in particular provide well defined, reproducible qubits [3]. An important challenge in these systems is the realisation of an architecture, where we can position donors within a crystalline environment with approx. 20-50nm separation, individually address each donor, manipulate the electron spins using ESR techniques and read-out their spin states.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Extremely long electron and nuclear spin coherence times have been demonstrated in isotopically pure Si-28 [1, 2] making silicon a promising semiconductor material for spin-based quantum information. The two-level spin state of single electrons bound to shallow phosphorus donors in silicon in particular provide well defined, reproducible qubits [3]. An important challenge in these systems is the realisation of an architecture, where we can position donors within a crystalline environment with approx. 20-50nm separation, individually address each donor, manipulate the electron spins using ESR techniques and read-out their spin states.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
硅中的原子量子位
在同位素纯Si-28中已经证明了极长的电子和核自旋相干时间[1,2],使硅成为基于自旋的量子信息的有前途的半导体材料。在硅中,单电子与浅磷供体结合的两能级自旋态提供了定义良好、可重复的量子比特[3]。在这些系统中,一个重要的挑战是实现一个架构,在这个架构中,我们可以在一个近似的晶体环境中定位供体。20-50nm分离,单独定位每个供体,使用ESR技术操纵电子自旋并读出其自旋态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Charge Effects on Semiconductor-Metal Phase Transition in Mono-layer MoTe2 Reduced RTN Amplitude and Single Trap induced Variation for Ferroelectric FinFET by Substrate Doping Optimization Atomistic Study of Transport Characteristics in Sub-1nm Ultra-narrow Molybdenum Disulfide (MoS2) Nanoribbon Field Effect Transistors Si Electron Nano-Aspirator towards Emerging Hydro-Electronics 3D Heterogeneous Integration with 2D Materials
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1