A. Burke, O. Klochan, A. Hamilton, I. Farrer, D. Ritchie, A. Micolich
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引用次数: 0
Abstract
We report the dependence of the 1D Landé g-factor g* on electron density in quantum point contacts (QPCs). We obtain g* values up to 2.8 significantly exceeding previous values for Al-GaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs.
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