Creating AlGaAs photodetectors

O. Rabinovich, S. Didenko, S. Legotin, M. Basalevskiy
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引用次数: 2

Abstract

AlGaAs/GaAs photodetectors operate at room temperature in the visible spectrum. Distinctive features of the photodetectors are: high absolute spectral sensitivity up to 0.112 A / W at μmax = 530–570 nm; photodiodes showed the low dark current of 4.7 nA and 530 nA, accordantly, at 5 V reverse bias. The shift of the spectral characteristics which is associated with an increase in the band gap was detected.
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制造AlGaAs光电探测器
AlGaAs/GaAs光电探测器工作在室温下的可见光谱。该光电探测器的特点是:在μmax = 530-570 nm处,绝对光谱灵敏度高达0.112 A / W;在5 V反向偏置下,光电二极管显示出4.7 nA和530 nA的低暗电流。光谱特性的位移与带隙的增加有关。
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