K. Kobayashi, D. Umemoto, R. Esfandiari, A. Oki, L. M. Pawlowicz, M. E. Hafizi, L. Tran, J. Camou, K. Stolt, D. Streit, M. E. Kim
{"title":"GaAs HBT MMIC broadband amplifiers from DC to 20 GHz","authors":"K. Kobayashi, D. Umemoto, R. Esfandiari, A. Oki, L. M. Pawlowicz, M. E. Hafizi, L. Tran, J. Camou, K. Stolt, D. Streit, M. E. Kim","doi":"10.1109/MCS.1990.110929","DOIUrl":null,"url":null,"abstract":"Three monolithic wideband and high-gain amplifiers implemented with 2-3- mu m GaAs heterojunction bipolar transistor (HBT) monolithic microwave IC (MMIC) technology are presented. A single-stage direct-coupled amplifier achieves a 3-dB bandwidth from DC to 20 GHz, which is believed to be the widest bandwidth reported for direct-coupled amplifiers. The amplifier has a 6-dB nominal gain with a peak gain of 7.3 dB at 10 GHz. The 1-dB compression is 10 dBm at midband, and the noise figure is between 7 and 10 dB over the bandwidth. A two-stage version of this amplifier achieves 14.5-dB gain up to 12 GHz. Its output power and noise performance are comparable to the single-stage version. The third wideband amplifier design is based on passive component and microstrip matching circuitry. The matched amplifier has 14.5-dB nominal gain with a 3-dB bandwidth from 5 to 12 GHz.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
Three monolithic wideband and high-gain amplifiers implemented with 2-3- mu m GaAs heterojunction bipolar transistor (HBT) monolithic microwave IC (MMIC) technology are presented. A single-stage direct-coupled amplifier achieves a 3-dB bandwidth from DC to 20 GHz, which is believed to be the widest bandwidth reported for direct-coupled amplifiers. The amplifier has a 6-dB nominal gain with a peak gain of 7.3 dB at 10 GHz. The 1-dB compression is 10 dBm at midband, and the noise figure is between 7 and 10 dB over the bandwidth. A two-stage version of this amplifier achieves 14.5-dB gain up to 12 GHz. Its output power and noise performance are comparable to the single-stage version. The third wideband amplifier design is based on passive component and microstrip matching circuitry. The matched amplifier has 14.5-dB nominal gain with a 3-dB bandwidth from 5 to 12 GHz.<>
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