{"title":"A 10-fJ/bit/dB half-rate equalizer with charge-average switched-capacitor summation technique","authors":"Yen-Long Lee, Soon-Jyh Chang","doi":"10.1109/ISNE.2016.7543355","DOIUrl":null,"url":null,"abstract":"This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.