A New Monolithic Inkjet Printhead Using Single Crystalline Silicon For A Heating Resistor

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI:10.1109/IMNC.1998.730036

Choon-Sup Lee, Jae-Duk Lee, Jun‐Bo Yoon, Jae-Kwan Kirri, Hoon-Ju Chung, Chul‐Hi Han

引用次数: 2

Abstract

AbsWact The monolithic inkjet printhead usrng a newly suggested singye crystalline silicon for a heahng resistor was proposed and fabricated by a process integrahon The fabricated heating resistor was Characterized and ink drop ejection experiment was successfully performed. The heabng resistor was fabricated by FIPOS(Ful1 Isolahon by Porous Oxidized Silicon) not using inaplantahon or epitav but using a newly devised p+/n' double diffusion method The heatir?g resistor is thermally and electncally isolated from silicon substrate by FIPOS(21 using the p+/n' double dfluusron method The fabricahon using the sngle cvstalline silicon as a hea frng resistor was szmpler than conventional process because of using thermally grown oxide as a passivahon layer An jlSiCslTa).[ 11 The

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用单晶硅作为加热电阻的新型单片喷墨打印头

摘要:提出了一种新型单晶硅加热电阻单片喷墨打印头，并采用工艺集成技术制作了该单片喷墨打印头，对所制备的加热电阻进行了表征，成功地进行了墨滴喷射实验。采用FIPOS(Ful1 Isolahon by Porous Oxidized Silicon)法制备了一种新型的p+/n'双扩散法，而不是采用内扩散法和外延法。通过FIPOS技术，该电阻器在热学和电学上都与硅衬底隔离(21使用p+/n'双流控法)。由于使用热生长氧化物作为钝化层，因此使用单晶硅作为钝化电阻的制造比传统工艺更简单。[11]

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

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