{"title":"Design and Optimization of Diode Triggered Silicon Controlled Rectifier in FinFET Technology","authors":"M. Miao, You Li, Wei Liang, R. Gauthier","doi":"10.23919/IEDS48938.2021.9468824","DOIUrl":null,"url":null,"abstract":"Diode trigger SCR (DTSCR) structure is introduced in FinFET technology for low voltage circuit ESD protection. The current direction is chosen to flow vertically down through the fins to make full use of the bulk silicon region. Further optimization of DTSCR is investigated to improve layout efficiency.","PeriodicalId":174954,"journal":{"name":"2020 International EOS/ESD Symposium on Design and System (IEDS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International EOS/ESD Symposium on Design and System (IEDS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IEDS48938.2021.9468824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Diode trigger SCR (DTSCR) structure is introduced in FinFET technology for low voltage circuit ESD protection. The current direction is chosen to flow vertically down through the fins to make full use of the bulk silicon region. Further optimization of DTSCR is investigated to improve layout efficiency.
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