{"title":"Electromigration performance of CVD-W/Al-alloy multilayered metallization","authors":"C. A. Martín, J. Ondrusek, J. McPherson","doi":"10.1109/RELPHY.1990.66057","DOIUrl":null,"url":null,"abstract":"Al alloys, including Al-Si(1%) and Al-Cu(2%), are investigated. The electromigration test results indicate that the rough surface texture of the underlying chemical vapor deposition (CVD)-W layer degrades the electromigration performance of the Al-Si film. The rough CVD-W surface texture had minimal impact on the electromigration performance of the Al-Cu films. A current-density exponent of 2.1-2.2 was found for both types of films. An activation energy for failure was determined to be 0.75 eV and 0.46 eV for the Al-Cu and Al-Si, respectively.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"28th Annual Proceedings on Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1990.66057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Al alloys, including Al-Si(1%) and Al-Cu(2%), are investigated. The electromigration test results indicate that the rough surface texture of the underlying chemical vapor deposition (CVD)-W layer degrades the electromigration performance of the Al-Si film. The rough CVD-W surface texture had minimal impact on the electromigration performance of the Al-Cu films. A current-density exponent of 2.1-2.2 was found for both types of films. An activation energy for failure was determined to be 0.75 eV and 0.46 eV for the Al-Cu and Al-Si, respectively.<>
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