Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66052
D. Crook
Projection indicates that by the turn of the century microcomputer chips will have 100 million transistors and failure rates of less than 10 FIT. Traditional accelerated product life tests and wafer-level reliability measurement techniques presently being developed will have severe limitations in resolving the 10 FIT failure rate of complex VLSI circuits. These limitations are discussed, along with the change in direction that the reliability engineering and manufacturing community will have to take over the next decade to meet the challenge of continuously decreasing failure rate goals.<>
{"title":"Evolution of VLSI reliability engineering","authors":"D. Crook","doi":"10.1109/RELPHY.1990.66052","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66052","url":null,"abstract":"Projection indicates that by the turn of the century microcomputer chips will have 100 million transistors and failure rates of less than 10 FIT. Traditional accelerated product life tests and wafer-level reliability measurement techniques presently being developed will have severe limitations in resolving the 10 FIT failure rate of complex VLSI circuits. These limitations are discussed, along with the change in direction that the reliability engineering and manufacturing community will have to take over the next decade to meet the challenge of continuously decreasing failure rate goals.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132076646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66056
K. Hinode, Y. Homma
The electromigration of layered fine Al conductors (AlSi/TiN, AlSi/W, over/under) is discussed. The study indicates that (1) layering with refractory metals degrades the migration immunity of the Al layer, (2) refractory metal layers tend to suppress Al grain growth and crystal orientation, (3) by improving the film properties of refractory metals and optimizing the layer structure to minimize this grain growth suppression, conductor lifetimes can be lengthened by one or more orders of magnitude over those of conventionally layered or monolayer conductors.<>
{"title":"Improvement of electromigration resistance of layered aluminum conductors","authors":"K. Hinode, Y. Homma","doi":"10.1109/RELPHY.1990.66056","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66056","url":null,"abstract":"The electromigration of layered fine Al conductors (AlSi/TiN, AlSi/W, over/under) is discussed. The study indicates that (1) layering with refractory metals degrades the migration immunity of the Al layer, (2) refractory metal layers tend to suppress Al grain growth and crystal orientation, (3) by improving the film properties of refractory metals and optimizing the layer structure to minimize this grain growth suppression, conductor lifetimes can be lengthened by one or more orders of magnitude over those of conventionally layered or monolayer conductors.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117326502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66055
A. Oates
Step spacing effects on electromigration in second-level runners of a two-level metal technology are investigated by stressing test structures with a wide range of spacing, of severe topography. Metal step coverage is affected by step spacing, and it is shown that regions with poor coverage (10, 20%) are particularly vulnerable to electromigration failure. When the interlevel dielectric processing is changed to improve step coverage, metal lifetimes do not increase to the extent expected. A new mode that occurs within a specific range of step spacing appears to dominate failure.<>
{"title":"Step spacing effects on electromigration","authors":"A. Oates","doi":"10.1109/RELPHY.1990.66055","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66055","url":null,"abstract":"Step spacing effects on electromigration in second-level runners of a two-level metal technology are investigated by stressing test structures with a wide range of spacing, of severe topography. Metal step coverage is affected by step spacing, and it is shown that regions with poor coverage (10, 20%) are particularly vulnerable to electromigration failure. When the interlevel dielectric processing is changed to improve step coverage, metal lifetimes do not increase to the extent expected. A new mode that occurs within a specific range of step spacing appears to dominate failure.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129131829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66097
S. Aritome, R. Kirisawa, T. Endoh, R. Nakayama, R. Shirota, K. Sakui, K. Ohuchi, F. Masuoka
Improvements in data retention characteristics of a FETMOS cell which has a self-aligned double poly-Si stacked structure are discussed. The improvement results from the use of a uniform write and erase technology. Experiments show that a gradual detrapping of electrons from the gate oxide to the substrate effectively suppresses data loss of the erased cell which stores positive charges in the floating gate. It is also shown that a uniform write and uniform erase technology using Fowler-Nordheim tunneling current guarantees a wide cell threshold voltage window even after 10/sup 6/ write and erase cycles. This technology realizes a highly reliable EEPROM with extended data retention characteristics.<>
{"title":"Extended data retention characteristics after more than 10/sup 4/ write and erase cycles in EEPROMs","authors":"S. Aritome, R. Kirisawa, T. Endoh, R. Nakayama, R. Shirota, K. Sakui, K. Ohuchi, F. Masuoka","doi":"10.1109/RELPHY.1990.66097","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66097","url":null,"abstract":"Improvements in data retention characteristics of a FETMOS cell which has a self-aligned double poly-Si stacked structure are discussed. The improvement results from the use of a uniform write and erase technology. Experiments show that a gradual detrapping of electrons from the gate oxide to the substrate effectively suppresses data loss of the erased cell which stores positive charges in the floating gate. It is also shown that a uniform write and uniform erase technology using Fowler-Nordheim tunneling current guarantees a wide cell threshold voltage window even after 10/sup 6/ write and erase cycles. This technology realizes a highly reliable EEPROM with extended data retention characteristics.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122913076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66090
A. Tezaki, T. Mineta, H. Egawa, T. Noguchi
Stress-induced migration failure in fine aluminium interconnects is explained by measurements of mechanical stress and a kinetic failure model. An advanced stress-measurement method using X-ray diffractometry revealed the actual three-dimensional mechanical stresses and open failure test results were well correlated in terms of the covering insulator, metal linewidth, test temperature, and time-dependent relaxation profile. A kinetic model, successfully reproduced the non-Arrhenius behavior of the failure rate under various parameters. An exponent of 4 and an activation energy of 1.0-1.4 eV were obtained. The microscopic mechanism of stress migration along with stress relaxation, and the practical advantage of the modeling are discussed.<>
{"title":"Measurement of three dimensional stress and modeling of stress induced migration failure in aluminium interconnects","authors":"A. Tezaki, T. Mineta, H. Egawa, T. Noguchi","doi":"10.1109/RELPHY.1990.66090","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66090","url":null,"abstract":"Stress-induced migration failure in fine aluminium interconnects is explained by measurements of mechanical stress and a kinetic failure model. An advanced stress-measurement method using X-ray diffractometry revealed the actual three-dimensional mechanical stresses and open failure test results were well correlated in terms of the covering insulator, metal linewidth, test temperature, and time-dependent relaxation profile. A kinetic model, successfully reproduced the non-Arrhenius behavior of the failure rate under various parameters. An exponent of 4 and an activation energy of 1.0-1.4 eV were obtained. The microscopic mechanism of stress migration along with stress relaxation, and the practical advantage of the modeling are discussed.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127652328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66078
R. Rakkhit, S. Haddad, C. Chang, J. Yue
Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.<>
{"title":"Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices","authors":"R. Rakkhit, S. Haddad, C. Chang, J. Yue","doi":"10.1109/RELPHY.1990.66078","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66078","url":null,"abstract":"Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"45 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134447587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66093
D. Fisch, N. Abt, F. Bens, W. Miller, T. Pramanik, W. Saiki, W. Shepherd
The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<>
{"title":"Analysis of thin film ferroelectric aging","authors":"D. Fisch, N. Abt, F. Bens, W. Miller, T. Pramanik, W. Saiki, W. Shepherd","doi":"10.1109/RELPHY.1990.66093","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66093","url":null,"abstract":"The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132194792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66071
J. Suehle, H. Schafft
Two effects that complicate the electromigration characterization of metallization for pulsed stress are discussed. One is the dependence of the t/sub 50/ enhancement (due to pulsed operation) on current density, and the other is a decrease of this enhancement over a range of frequencies (0.2 to 2 MHz) that is connected with the Joule heating. These effects are discussed in terms of changes in the buildup and relaxation response times of the excess vacancy concentrations.<>
{"title":"Current density dependence of electromigration t/sub 50/ enhancement due to pulsed operation","authors":"J. Suehle, H. Schafft","doi":"10.1109/RELPHY.1990.66071","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66071","url":null,"abstract":"Two effects that complicate the electromigration characterization of metallization for pulsed stress are discussed. One is the dependence of the t/sub 50/ enhancement (due to pulsed operation) on current density, and the other is a decrease of this enhancement over a range of frequencies (0.2 to 2 MHz) that is connected with the Joule heating. These effects are discussed in terms of changes in the buildup and relaxation response times of the excess vacancy concentrations.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123555877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66053
D. Baglee, Lynn Nannemann, C. Huang
Four areas for achieving a stable, reliable process in a high volume environment are considered: (a) process capability in a manufacturing environment; (b) manufacturing control; (c) assessment of process interactions; (d) process monitoring. These areas are discussed, and suggestions for their application are made.<>
{"title":"Building reliability into EPROMs","authors":"D. Baglee, Lynn Nannemann, C. Huang","doi":"10.1109/RELPHY.1990.66053","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66053","url":null,"abstract":"Four areas for achieving a stable, reliable process in a high volume environment are considered: (a) process capability in a manufacturing environment; (b) manufacturing control; (c) assessment of process interactions; (d) process monitoring. These areas are discussed, and suggestions for their application are made.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121266609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66087
L. W. Smith, C. Welles, A. Bivas, F. Yost, J.E. Campbell
Thermal wave modulated optical reflectance imaging, for imaging stress-induced voids in metallization, is described. This method nondestructively detects, with submicron resolution, voids within metallization without removal of the stress-originating passivation layers. The width, area, location, and a thickness parameter for each void are measured after heat treatment at 673 K for various times. All voids in a selected field of view are automatically labeled and measured at each time step. This removes the tedium of manually measuring individual voids and greatly increases void growth statistics. These statistics are then compared with a stress-driven diffusive model of void growth. This nondestructive technique has allowed observation of two new stress-void phenomena: a growth process akin to Ostwald ripening and the physical movement and agglomeration of voids.<>
{"title":"Direct measurement of stress-induced void growth by thermal wave modulated optical reflectance image","authors":"L. W. Smith, C. Welles, A. Bivas, F. Yost, J.E. Campbell","doi":"10.1109/RELPHY.1990.66087","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66087","url":null,"abstract":"Thermal wave modulated optical reflectance imaging, for imaging stress-induced voids in metallization, is described. This method nondestructively detects, with submicron resolution, voids within metallization without removal of the stress-originating passivation layers. The width, area, location, and a thickness parameter for each void are measured after heat treatment at 673 K for various times. All voids in a selected field of view are automatically labeled and measured at each time step. This removes the tedium of manually measuring individual voids and greatly increases void growth statistics. These statistics are then compared with a stress-driven diffusive model of void growth. This nondestructive technique has allowed observation of two new stress-void phenomena: a growth process akin to Ostwald ripening and the physical movement and agglomeration of voids.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128996644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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