Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66052
D. Crook
Projection indicates that by the turn of the century microcomputer chips will have 100 million transistors and failure rates of less than 10 FIT. Traditional accelerated product life tests and wafer-level reliability measurement techniques presently being developed will have severe limitations in resolving the 10 FIT failure rate of complex VLSI circuits. These limitations are discussed, along with the change in direction that the reliability engineering and manufacturing community will have to take over the next decade to meet the challenge of continuously decreasing failure rate goals.<>
{"title":"Evolution of VLSI reliability engineering","authors":"D. Crook","doi":"10.1109/RELPHY.1990.66052","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66052","url":null,"abstract":"Projection indicates that by the turn of the century microcomputer chips will have 100 million transistors and failure rates of less than 10 FIT. Traditional accelerated product life tests and wafer-level reliability measurement techniques presently being developed will have severe limitations in resolving the 10 FIT failure rate of complex VLSI circuits. These limitations are discussed, along with the change in direction that the reliability engineering and manufacturing community will have to take over the next decade to meet the challenge of continuously decreasing failure rate goals.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132076646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66056
K. Hinode, Y. Homma
The electromigration of layered fine Al conductors (AlSi/TiN, AlSi/W, over/under) is discussed. The study indicates that (1) layering with refractory metals degrades the migration immunity of the Al layer, (2) refractory metal layers tend to suppress Al grain growth and crystal orientation, (3) by improving the film properties of refractory metals and optimizing the layer structure to minimize this grain growth suppression, conductor lifetimes can be lengthened by one or more orders of magnitude over those of conventionally layered or monolayer conductors.<>
{"title":"Improvement of electromigration resistance of layered aluminum conductors","authors":"K. Hinode, Y. Homma","doi":"10.1109/RELPHY.1990.66056","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66056","url":null,"abstract":"The electromigration of layered fine Al conductors (AlSi/TiN, AlSi/W, over/under) is discussed. The study indicates that (1) layering with refractory metals degrades the migration immunity of the Al layer, (2) refractory metal layers tend to suppress Al grain growth and crystal orientation, (3) by improving the film properties of refractory metals and optimizing the layer structure to minimize this grain growth suppression, conductor lifetimes can be lengthened by one or more orders of magnitude over those of conventionally layered or monolayer conductors.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117326502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66055
A. Oates
Step spacing effects on electromigration in second-level runners of a two-level metal technology are investigated by stressing test structures with a wide range of spacing, of severe topography. Metal step coverage is affected by step spacing, and it is shown that regions with poor coverage (10, 20%) are particularly vulnerable to electromigration failure. When the interlevel dielectric processing is changed to improve step coverage, metal lifetimes do not increase to the extent expected. A new mode that occurs within a specific range of step spacing appears to dominate failure.<>
{"title":"Step spacing effects on electromigration","authors":"A. Oates","doi":"10.1109/RELPHY.1990.66055","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66055","url":null,"abstract":"Step spacing effects on electromigration in second-level runners of a two-level metal technology are investigated by stressing test structures with a wide range of spacing, of severe topography. Metal step coverage is affected by step spacing, and it is shown that regions with poor coverage (10, 20%) are particularly vulnerable to electromigration failure. When the interlevel dielectric processing is changed to improve step coverage, metal lifetimes do not increase to the extent expected. A new mode that occurs within a specific range of step spacing appears to dominate failure.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129131829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66097
S. Aritome, R. Kirisawa, T. Endoh, R. Nakayama, R. Shirota, K. Sakui, K. Ohuchi, F. Masuoka
Improvements in data retention characteristics of a FETMOS cell which has a self-aligned double poly-Si stacked structure are discussed. The improvement results from the use of a uniform write and erase technology. Experiments show that a gradual detrapping of electrons from the gate oxide to the substrate effectively suppresses data loss of the erased cell which stores positive charges in the floating gate. It is also shown that a uniform write and uniform erase technology using Fowler-Nordheim tunneling current guarantees a wide cell threshold voltage window even after 10/sup 6/ write and erase cycles. This technology realizes a highly reliable EEPROM with extended data retention characteristics.<>
{"title":"Extended data retention characteristics after more than 10/sup 4/ write and erase cycles in EEPROMs","authors":"S. Aritome, R. Kirisawa, T. Endoh, R. Nakayama, R. Shirota, K. Sakui, K. Ohuchi, F. Masuoka","doi":"10.1109/RELPHY.1990.66097","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66097","url":null,"abstract":"Improvements in data retention characteristics of a FETMOS cell which has a self-aligned double poly-Si stacked structure are discussed. The improvement results from the use of a uniform write and erase technology. Experiments show that a gradual detrapping of electrons from the gate oxide to the substrate effectively suppresses data loss of the erased cell which stores positive charges in the floating gate. It is also shown that a uniform write and uniform erase technology using Fowler-Nordheim tunneling current guarantees a wide cell threshold voltage window even after 10/sup 6/ write and erase cycles. This technology realizes a highly reliable EEPROM with extended data retention characteristics.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122913076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66090
A. Tezaki, T. Mineta, H. Egawa, T. Noguchi
Stress-induced migration failure in fine aluminium interconnects is explained by measurements of mechanical stress and a kinetic failure model. An advanced stress-measurement method using X-ray diffractometry revealed the actual three-dimensional mechanical stresses and open failure test results were well correlated in terms of the covering insulator, metal linewidth, test temperature, and time-dependent relaxation profile. A kinetic model, successfully reproduced the non-Arrhenius behavior of the failure rate under various parameters. An exponent of 4 and an activation energy of 1.0-1.4 eV were obtained. The microscopic mechanism of stress migration along with stress relaxation, and the practical advantage of the modeling are discussed.<>
{"title":"Measurement of three dimensional stress and modeling of stress induced migration failure in aluminium interconnects","authors":"A. Tezaki, T. Mineta, H. Egawa, T. Noguchi","doi":"10.1109/RELPHY.1990.66090","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66090","url":null,"abstract":"Stress-induced migration failure in fine aluminium interconnects is explained by measurements of mechanical stress and a kinetic failure model. An advanced stress-measurement method using X-ray diffractometry revealed the actual three-dimensional mechanical stresses and open failure test results were well correlated in terms of the covering insulator, metal linewidth, test temperature, and time-dependent relaxation profile. A kinetic model, successfully reproduced the non-Arrhenius behavior of the failure rate under various parameters. An exponent of 4 and an activation energy of 1.0-1.4 eV were obtained. The microscopic mechanism of stress migration along with stress relaxation, and the practical advantage of the modeling are discussed.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127652328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66075
M. Walters, A. Reisman
Gate oxide defects, in the form of trapped charges and neutral electron traps, were measured before and after irradiation using optically assisted electron injection. Following irradiation and injection, the measured voltage shifts ( Delta V/sub T/) indicate that radiation-induced extrinsic defects are localized near, but not exactly at the Si-SiO/sub 2/ interface. Delta V/sub T/ is found to be linear with respect to the gate oxide thickness when the top electrode resides above the defect region, and quadratic with respect to the thickness when the top electrode encroaches on the defect region. For very thin gate oxides, Delta V/sub T/ approaches zero. Application of a defect distribution model based on this behavior reveals that the gate oxidation temperature does not influence the distribution of radiation-induced defects, but does influence their concentration; with the 800 degrees C oxides always containing more defects than the 1000 degrees C oxides. A gate oxide thickness regime of less than 5-6 nm in which radiation-induced threshold voltage shifts approach zero is identified.<>
{"title":"Distribution phenomena of charged defects and neutral electron traps in process-induced radiation-damaged IGFETs with gate insulators grown at 1000 degrees C and 800 degrees C","authors":"M. Walters, A. Reisman","doi":"10.1109/RELPHY.1990.66075","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66075","url":null,"abstract":"Gate oxide defects, in the form of trapped charges and neutral electron traps, were measured before and after irradiation using optically assisted electron injection. Following irradiation and injection, the measured voltage shifts ( Delta V/sub T/) indicate that radiation-induced extrinsic defects are localized near, but not exactly at the Si-SiO/sub 2/ interface. Delta V/sub T/ is found to be linear with respect to the gate oxide thickness when the top electrode resides above the defect region, and quadratic with respect to the thickness when the top electrode encroaches on the defect region. For very thin gate oxides, Delta V/sub T/ approaches zero. Application of a defect distribution model based on this behavior reveals that the gate oxidation temperature does not influence the distribution of radiation-induced defects, but does influence their concentration; with the 800 degrees C oxides always containing more defects than the 1000 degrees C oxides. A gate oxide thickness regime of less than 5-6 nm in which radiation-induced threshold voltage shifts approach zero is identified.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"333 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124691260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66071
J. Suehle, H. Schafft
Two effects that complicate the electromigration characterization of metallization for pulsed stress are discussed. One is the dependence of the t/sub 50/ enhancement (due to pulsed operation) on current density, and the other is a decrease of this enhancement over a range of frequencies (0.2 to 2 MHz) that is connected with the Joule heating. These effects are discussed in terms of changes in the buildup and relaxation response times of the excess vacancy concentrations.<>
{"title":"Current density dependence of electromigration t/sub 50/ enhancement due to pulsed operation","authors":"J. Suehle, H. Schafft","doi":"10.1109/RELPHY.1990.66071","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66071","url":null,"abstract":"Two effects that complicate the electromigration characterization of metallization for pulsed stress are discussed. One is the dependence of the t/sub 50/ enhancement (due to pulsed operation) on current density, and the other is a decrease of this enhancement over a range of frequencies (0.2 to 2 MHz) that is connected with the Joule heating. These effects are discussed in terms of changes in the buildup and relaxation response times of the excess vacancy concentrations.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123555877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66065
C. Shirley, S.C. Maston
The low-frequency (10 KHz) dissipation factor of metal comb/serpentine structures sandwiched between a phosphosilicate glass (PSG) substrate and passivation is a useful electrical indication of moisture penetration through the passivation. Wafer-level dissipation factor readouts after periods of highly accelerated temperature/humidity stress technique (HAST) testing at 159 degrees C and 85% relative humidity were used to monitor the rate of moisture ingression through passivations of various compositions and thicknesses. For plasma-deposited oxynitride films the dominant mechanism is uniform penetration (intrinsic) with a median-time-to-failure of 370 hours (at 159/85). For oxynitride films capped by nitride films, the dominant mechanism is penetration through defects in the nitride film. The defect density of nitride cap films increases with decreasing nitride film thickness.<>
{"title":"Electrical measurements of moisture penetration through passivation","authors":"C. Shirley, S.C. Maston","doi":"10.1109/RELPHY.1990.66065","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66065","url":null,"abstract":"The low-frequency (10 KHz) dissipation factor of metal comb/serpentine structures sandwiched between a phosphosilicate glass (PSG) substrate and passivation is a useful electrical indication of moisture penetration through the passivation. Wafer-level dissipation factor readouts after periods of highly accelerated temperature/humidity stress technique (HAST) testing at 159 degrees C and 85% relative humidity were used to monitor the rate of moisture ingression through passivations of various compositions and thicknesses. For plasma-deposited oxynitride films the dominant mechanism is uniform penetration (intrinsic) with a median-time-to-failure of 370 hours (at 159/85). For oxynitride films capped by nitride films, the dominant mechanism is penetration through defects in the nitride film. The defect density of nitride cap films increases with decreasing nitride film thickness.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130094957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66101
D. Lin
A three-dimensional thermal model to determine the temperature rise and voltage build-up of VLSI devices stressed by human-body model (HBM) electrostatic discharges (ESD) is discussed. Application of the model to a specific device is yields failure thresholds and failure sites in agreement with the experimental results. This detailed model can be used to evaluate and improve designs of ESD protection circuits. It not only reconfirms the good design principles for ESD protection circuits, but also points out the importance of pulse risetime in determining the failure site. Allowing a wide range in risetime in ESD simulator specifications (such as the 0-10 ns range in MIL-STD Method 3015.6 Notice 7 and the 2-10 ns range in the EOS/ESD Association HBM Standard), may cause ESD pulses of different risetimes within the allowable range to deposit energy to different spots in a device and yield uncorrelatable ESD thresholds.<>
{"title":"Thermal breakdown of VLSI by ESD pulses","authors":"D. Lin","doi":"10.1109/RELPHY.1990.66101","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66101","url":null,"abstract":"A three-dimensional thermal model to determine the temperature rise and voltage build-up of VLSI devices stressed by human-body model (HBM) electrostatic discharges (ESD) is discussed. Application of the model to a specific device is yields failure thresholds and failure sites in agreement with the experimental results. This detailed model can be used to evaluate and improve designs of ESD protection circuits. It not only reconfirms the good design principles for ESD protection circuits, but also points out the importance of pulse risetime in determining the failure site. Allowing a wide range in risetime in ESD simulator specifications (such as the 0-10 ns range in MIL-STD Method 3015.6 Notice 7 and the 2-10 ns range in the EOS/ESD Association HBM Standard), may cause ESD pulses of different risetimes within the allowable range to deposit energy to different spots in a device and yield uncorrelatable ESD thresholds.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122932558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66053
D. Baglee, Lynn Nannemann, C. Huang
Four areas for achieving a stable, reliable process in a high volume environment are considered: (a) process capability in a manufacturing environment; (b) manufacturing control; (c) assessment of process interactions; (d) process monitoring. These areas are discussed, and suggestions for their application are made.<>
{"title":"Building reliability into EPROMs","authors":"D. Baglee, Lynn Nannemann, C. Huang","doi":"10.1109/RELPHY.1990.66053","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66053","url":null,"abstract":"Four areas for achieving a stable, reliable process in a high volume environment are considered: (a) process capability in a manufacturing environment; (b) manufacturing control; (c) assessment of process interactions; (d) process monitoring. These areas are discussed, and suggestions for their application are made.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121266609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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