Impact of vias on the thermal effect of deep sub-micron Cu/low-k interconnects

TingYen Chiang, K. Saraswat
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引用次数: 10

Abstract

This paper investigates in detail the impact of vias on the thermal characteristics of high performance Cu/low-k interconnects. It shows that the effectiveness of vias in reducing the temperature rise in interconnects is highly dependent on the dielectric material used. An efficient 3D electro-thermal simulation methodology is presented to evaluate the temperature profile along wires and the thermal coupling between them. The possibility that the thermal effect may degrade the expected speed improvement from the use of low-k dielectrics is discussed. Finally, the more realistic RC performances of various low-k schemes, under the impact of thermal effects, are examined.
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过孔对深亚微米Cu/低k互连热效应的影响
本文详细研究了过孔对高性能铜/低钾互连热特性的影响。结果表明,通孔在降低互连温升方面的有效性高度依赖于所使用的介电材料。提出了一种有效的三维电热模拟方法来评估导线沿线的温度分布和导线之间的热耦合。讨论了热效应可能降低使用低k介电材料的预期速度提高的可能性。最后,对不同低k方案在热效应影响下的RC性能进行了比较真实的分析。
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