EBIC Application in Finding Particle Defects

Abstract

EBIC (Electron Beam Induced Current) is a microscopic technique offered by nano-probing system to characterize the electrical property of active circuits in a semiconductor device. EBIC is also a powerful local fault isolation technique which is capable to narrow down the potential physical defect site. In this paper, we will show three case studies of applying EBIC technique coupled with various failure analysis equipment to discover particle defects buried in metal and poly structures in Flash memory devices.