Novel UPE filtration technology for advanced photolithography materials

Ryo Yokoyama, Akihito Ui, Christi A. Dawydiak, Vinay Kalyani
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Abstract

High resolution, line edge roughness, and sensitivity are the key performance factors to accelerate EUV lithography into high volume manufacturing. EUV is still a developing technology with several intriguing components, such as high NA exposure system and metal oxide resist [1,2]. In terms of cleanliness, the photoresist (PR) and Spin-on carbons (SOC) in underlayers need to have the same level of cleanliness from defect sources to meet the yield targets in the successive photolithography process after exposure. Filtration technology to remove defect sources from raw materials are continuously evolving to adapt to unique behaviors and compatibility of EUV materials. UPE (ultrahigh molecular weight polyethylene) filtration is a critical technology to remove small particles consistently. In this study, UPE filter development is examined to meet the needs of EUV materials. The filter performance was evaluated with underlayer materials. A new design of UPE membrane morphology achieved significant improvements. The details of the extensive experimental result are discussed in the report.
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用于先进光刻材料的新型UPE过滤技术
高分辨率,线边缘粗糙度和灵敏度是加速EUV光刻进入大批量生产的关键性能因素。EUV仍是一项发展中的技术,有几个有趣的组成部分,如高NA暴露系统和金属氧化物抗蚀剂[1,2]。在清洁度方面,底层的光刻胶(PR)和自旋碳(SOC)需要具有相同的缺陷源清洁度,以满足曝光后连续光刻工艺的良率目标。为了适应极紫外光材料的独特性能和兼容性,从原材料中去除缺陷源的过滤技术也在不断发展。UPE(超高分子量聚乙烯)过滤是一项关键技术,以去除小颗粒一致。在本研究中,研究了UPE过滤器的发展以满足EUV材料的需求。用底层材料对过滤性能进行了评价。一种新的UPE膜形态设计取得了显著的改善。报告中详细讨论了广泛的实验结果。
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