N. Papandreou, Thomas Parnell, T. Mittelholzer, H. Pozidis, T. Griffin, G. Tressler, T. Fisher, C. Camp
{"title":"Effect of Read Disturb on Incomplete Blocks in MLC NAND Flash Arrays","authors":"N. Papandreou, Thomas Parnell, T. Mittelholzer, H. Pozidis, T. Griffin, G. Tressler, T. Fisher, C. Camp","doi":"10.1109/IMW.2016.7495267","DOIUrl":null,"url":null,"abstract":"The effect of read disturb on partially programmed blocks of MLC NAND is evaluated using experimental data from 2y-, 1y- and 1x-nm Flash memory devices. We demonstrate that when a partially programmed block is exposed to a large number of reads before it is finalized in terms of page programming, the remaining pages will exhibit a significant bit error-rate (BER) increase. The page-BER is characterized in terms of program-erase cycles and read cycles and is further analyzed based on the programmed threshold voltage distributions. The impact of the page programming algorithm is also discussed.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7495267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
The effect of read disturb on partially programmed blocks of MLC NAND is evaluated using experimental data from 2y-, 1y- and 1x-nm Flash memory devices. We demonstrate that when a partially programmed block is exposed to a large number of reads before it is finalized in terms of page programming, the remaining pages will exhibit a significant bit error-rate (BER) increase. The page-BER is characterized in terms of program-erase cycles and read cycles and is further analyzed based on the programmed threshold voltage distributions. The impact of the page programming algorithm is also discussed.