Effect of Read Disturb on Incomplete Blocks in MLC NAND Flash Arrays

N. Papandreou, Thomas Parnell, T. Mittelholzer, H. Pozidis, T. Griffin, G. Tressler, T. Fisher, C. Camp
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引用次数: 16

Abstract

The effect of read disturb on partially programmed blocks of MLC NAND is evaluated using experimental data from 2y-, 1y- and 1x-nm Flash memory devices. We demonstrate that when a partially programmed block is exposed to a large number of reads before it is finalized in terms of page programming, the remaining pages will exhibit a significant bit error-rate (BER) increase. The page-BER is characterized in terms of program-erase cycles and read cycles and is further analyzed based on the programmed threshold voltage distributions. The impact of the page programming algorithm is also discussed.
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MLC NAND闪存阵列中读干扰对不完整块的影响
利用2y- nm、1y- nm和1x-nm闪存器件的实验数据,评估了读干扰对MLC NAND部分编程块的影响。我们证明,当部分编程的块在完成页面编程之前暴露于大量读取时,剩余的页面将显示出显着的误码率(BER)增加。根据程序擦除周期和读取周期来表征页面误码率,并根据程序阈值电压分布进一步分析。讨论了页面编程算法的影响。
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